BF820W

DISCRETE SEMICONDUCTORS DATA SHEET ge M3D102 BF820W NPN high-voltage transistor Product data sheet Supersedes data of 1997 Sep 03 2003 Sep 09 NXP Semiconductors NPN high-voltage transistor Product data sheet BF820W FEATURES Low current (max. 50 mA) High voltage (max. 300 V). APPLICATIONS Telephony and professional communication equipment. PINNING PIN 1 2 3 DESCRIPTION base emitter collector DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package. handbook, halfpage 3 3 MARKING TYPE NUMBER BF820W MARKING CODE(1) 1V* Notes 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. 1 1 Top view 2 MAM062 2 Fig.1 Simplified outline (SOT323) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER VCBO VCEO ICM Ptot hFE Cre fT collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain feedback capacitance transition frequency CONDITIONS open emitter open base Tamb ≤ 25 °C IC = 25 mA; VCE = 20 V IC = ic = 0; VCB = 30 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz MIN. − − − − 50 − 60 MAX. 300 300 100 200 − 1.6 − UNIT V V mA mW pF MHz 2003 Sep 09 2 NXP Semiconductors NPN high-voltage transistor Product data sheet BF820W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak coll...