Document
DISCRETE SEMICONDUCTORS
DATA SHEET
BF821; BF823 PNP high-voltage transistors
Product data sheet Supersedes data of 1999 Apr 15
2004 Jan 16
NXP Semiconductors
PNP high-voltage transistors
Product data sheet
BF821; BF823
FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V).
APPLICATIONS • Telephony and professional communication equipment.
PINNING
PIN 1 2 3
base emitter collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT23 plastic package. NPN complements: BF820, BF822.
handbook, halfpage
3
3
MARKING
TYPE NUMBER BF821 BF823
MARKING CODE(1) 1W* 1Y*
Note
1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China.
1
Top view
1
2
MAM256
2
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPENUMBER
BF821 BF823
NAME − −
PACKAGE
DESCRIPTION plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads
VERSION SOT23 SOT23
2004 Jan 16
2
NXP Semiconductors
PNP high-voltage transistors
P.