BF841

NPN Silicon RF Transistors BF 840 BF 841 q q q Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion Low output conductance Type BF 840 BF 841 Marking NC ND Ordering Code Q62702-F1240 Q62702-F1287 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TA ≤ 25 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Rth JA ≤ Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg Values 40 40 4 25 2 280 150 – 65 … + 150 Unit V mA mW ˚C 450 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BF 840 BF 841 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IB = 0 Collector-base cutoff current VCB = 20 V, IE = 0 DC current gain, IC = 1 mA, VCE = 10 V BF 840 BF 841 Base-emitter voltage IC = 1 mA, VCE = 10 V AC Characteristics Transition frequency IC = 1 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Noise figure IC = 1 mA, VCE = 10 V, f = 100 kHz RS = 200 Ω Output conductance IC = 1 mA, VCE = 10 V, f = 0.5 MHz fT Ccb F – – – 380 0.3 1.7 – – – MHz pF dB V...