BF844

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BF844/D High Voltage Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER BF844 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 400 450 6.0 300 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Emitter Breakdown Voltage (IC = 100 µAdc, VBE = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 400 Vdc, IE = 0) Collector Cutoff Current (VCE = 400 Vdc, VBE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO ICES IEBO 400 450 450 6.0 — — — — — — — 0.1 500 0.1 Vdc Vdc Vdc Vdc µAdc nAdc µAdc v 300 ms, Duty Cycle v 2.0%. Motorola Small–Signal Transistors,...