BF869

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF869; BF871 NPN high-voltage transistors Product specification Supersedes data of 1996 Dec 09 1999 Apr 12 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES Low feedback capacitance. handbook, halfpage BF869; BF871 APPLICATIONS For use in class-B video output stages in colour television receivers. 2 DESCRIPTION NPN transistors in a TO-202 plastic package. PNP complement: BF872. PINNING PIN 1 2 3 emitter collector, connected to mounting base base DESCRIPTION 1 2 3 3 1 MBH793 Fig.1 Simplified outline (TO-202) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF869 BF871 VCEO collector-emitter voltage BF869 BF871 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C Tmb ≤ 25 °C peak value open collector open base − − − − − − − − −65 − −65 250 300 5 50 100 50 1.6 5 +150 150 +150 V V V mA mA mA W W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 250 300 V V MIN. MAX. UNIT 1999 Apr 12 2 Philips Semiconductors Product specification NPN high-voltage transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting base BF869; BF871 VA...