high-voltage transistors. BF871 Datasheet

BF871 transistors. Datasheet pdf. Equivalent

BF871 Datasheet
Recommendation BF871 Datasheet
Part BF871
Description NPN high-voltage transistors
Feature BF871; DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF869; BF871 NPN high-voltage transi.
Manufacture NXP
Datasheet
Download BF871 Datasheet





NXP BF871
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D067
BF869; BF871
NPN high-voltage transistors
Product specification
Supersedes data of 1996 Dec 09
1999 Apr 12



NXP BF871
Philips Semiconductors
NPN high-voltage transistors
Product specification
BF869; BF871
FEATURES
Low feedback capacitance.
APPLICATIONS
For use in class-B video output stages in colour
television receivers.
DESCRIPTION
NPN transistors in a TO-202 plastic package.
PNP complement: BF872.
handbook, halfpage
2
3
1
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector, connected to mounting base
base
1 23
MBH793
Fig.1 Simplified outline (TO-202) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BF869
BF871
collector-emitter voltage
BF869
BF871
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
peak value
Tamb 25 °C
Tmb 25 °C
MIN. MAX. UNIT
250 V
300 V
250 V
300 V
5V
50 mA
100 mA
50 mA
1.6 W
5W
65 +150 °C
150 °C
65 +150 °C
1999 Apr 12
2



NXP BF871
Philips Semiconductors
NPN high-voltage transistors
Product specification
BF869; BF871
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Rth j-mb
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
VALUE
78
25
UNIT
K/W
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
Cre
fT
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
IE = 0; VCB = 200 V
IE = 0; VCB = 200 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 25 mA; VCE = 20 V
IC = 30 mA; IB = 5 mA
IC = ic = 0; VCE = 30 V; f = 1 MHz
IC = 10 mA; VCE = 10 V; f = 100 MHz
50
60
MAX.
10
10
50
600
2
UNIT
nA
µA
nA
mV
pF
MHz
1999 Apr 12
3





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