SUP90N08-7m7P

SUP90N08-7m7P Vishay Siliconix N-Channel 75-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 75 0.0077 at VGS = 10 V ID (A) 90d Qg (Typ.) 69 TO-220AB FEATURES TrenchFET® Power MOSFETS 100 % Rg and UIS Tested APPLICATIONS Synchronous Rectification RoHS COMPLIANT D DRAIN connected to TAB GD S Top View Ordering Information: SUP90N08-7m7P-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current IDM Avalanche Current IAS Single Avalanche Energya L = 0.1 mH EAS Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 75 ± 20 90d 90d 180 50 125 208.3b 3.75 - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Note...