2SA1740

PNP Epitaxial Planar Silicon Transistor FEATURES  High breakdown voltage.  Adoption of MBIT process.  Excellent hFE linearlity. Pb Lead-free APPLICATIONS  High-Voltage Driver Applications Production specification 2SA1740 ORDERING INFORMATION Type No. Marking 2SA1740 AK SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICP Collector Current(Pulse) PC Collector Dissipation Tj,Tstg Junction and Storage Temperature Note1:Mounted on ceramic substrate(250mm2*0.8t) Value Units -400 V -400 V -5 V -200 mA -400 mA 0.5 W 1.3 Note1 W -55 to +150 ℃ E042 Rev.A www.gmesemi.com 1 PNP Epitaxial Planar Silicon Transistor Production specification 2SA1740 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown vo...