2SB1073

SMD Type PNP Transistors 2SB1073 Transistors ■ Features ● Low collector to emitter saturation voltage VCE(sat). ●Large peak collector current ICP. 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector current -Pulse Collector Power Dissipation Junction Temperature Storage Temperature range Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg Rating -30 -20 -7 -4 -7 1 150 -55 to 150 Unit V A W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= -100 μA， IE=0 VCEO Ic= -1 mA，IB=0 V...