2SB1119

PNP Epitaxial Planar Silicon Transistors FEATURES  Very small size making it easy to provide High-density,small-size hybrid IC’s. Pb Lead-free Production specification 2SB1119 ORDERING INFORMATION Type No. Marking 2SB1119 BB SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage -25 V VEBO IC PC Emitter-Base Voltage Collector Current –DC -Pulse Collector Dissipation -5 V -1 mA -2 500 mW Tj,Tstg Junction and Storage Temperature -55 to+150 ℃ E043 Rev.A www.gmesemi.com 1 Production specification PNP Epitaxial Planar Silicon Transistors 2SB1119 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA IE=0 -25 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO...