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2SB1424

GME

Transistor

Production specification Low VCE(sat) Transistor(-20V,-3A) FEATURES  Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). Pb...


GME

2SB1424

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Description
Production specification Low VCE(sat) Transistor(-20V,-3A) FEATURES  Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). Pb Lead-free  Excellent DC current gain characterisitics.  Complementary the 2SD2150. 2SB1424 APPLICATIONS  This device is designed as a general purpose amplifier and switching. ORDERING INFORMATION Type No. Marking 2SB1424 AEQ/AER SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -20 VCEO Collector-Emitter Voltage -20 Unit V V VEBO IC PC Tj,Tstg Emitter-Base Voltage Collector Current –DC -Pulse Collector power Dissipation Junction and Storage Temperature -6 -3 -5 0.5 -55 to +150 V A W ℃ E035 Rev.A www.gmesemi.com 1 Production specification Low VCE(sat) Transistor(-20V,-3A) 2SB1424 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-...




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