BF970

BF970 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features D High gain D Low noise 3 2 94 9308 13623 1 BF970 Marking: BF970 Plastic case (TO 50) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol –VCBO –VCEO –VEBO –IC Ptot Tj Tstg Value 40 35 3 30 300 150 –55 to +150 Unit V V V mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 300 Unit K/W Document Number 85005 Rev. 3, 20-Jan-99 www.vishay.de FaxBack +1-408-970-5600 1 (5) BF970 Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage DC forward current transfer ratio Test Conditions –VCE = 40 V, VBE = 0 –VCB = 20 V, IE = 0 –VEB = 2 V, IC = 0 –IC = 1 mA, IB = 0 –VCE = 10 V, –IC = 3 mA Symbol Min Typ Max Unit –ICES 100 mA –ICBO 100 nA –IEBO 10 mA –V(BR)CEO 35 V hFE 25 50 90 Electrical AC Characteristics Tamb = 25_C, unless oth...