BF979
Vishay Telefunken
Silicon PNP Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handli...
BF979
Vishay Telefunken
Silicon
PNP Planar RF
Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
UHF/VHF uncontrolled prestages with low noise and low modulation.
Features
D High cross modulation performance D High power gain
3
D Low noise D High reverse attenuation
2
94 9308
13623
1
BF979 Marking: BF979 Plastic case (TO 50) 1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol –VCBO –VCEO –VEBO –IC Ptot Tj Tstg Value 20 20 3 50 300 150 –55 to +150 Unit V V V mA mW °C °C
Tamb ≤ 60 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 300 Unit K/W
Document Number 85006 Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600 1 (5)
BF979
Vishay Telefunken Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage DC forward current transfer ratio Test Conditions –VCE = 20 V, VBE = 0 –VCB = 15 V, IE = 0 –VEB = 3 V, IC = 0 –IC = 1 mA, IB = 0 –VCE = 10 V, –IC = 10 mA Symbol Min Typ Max Unit –ICES 100 mA –IC...