BF989

DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET FEATURES Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS UHF applications such as: – UHF television tuners – Professional communication equipment. PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 Top view Marking code: MAp. MAM039 handbook, halfpage BF989 DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. 4 3 g2 g1 d DESCRIPTION 1 2 s,b Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj Y fs Cig1-s Crs F PARAMETER drain-source voltage drain current total power dissipation junction temperature transfer admittance feedback capacitance noise figure f = 1 kHz; ID = 7 mA; VDS = 10 V; VG2-S = 4 V f = 1 MHz; ID = 7 mA; VDS = 10 V; VG2-S = 4 V input capacitance at gate 1 f = 1 MHz; ID = 7 mA; VDS = 10 V; VG2-S = 4 V up to Tamb = 60 °C CONDITIONS − − − − 12 1.8 25 TYP. MAX. 20 20 200 150 − − − − UNIT V mA mW °C mS pF fF dB f = 800 MHz; GS = 2 mS; BS = BSopt; ID = 7 mA; 2.8 VDS = 10 V; VG2-S = 4 V April 1991 2 Philips Semiconductors Product specification N-channel dual-gate MOS-FET LIMITING VALUES In according with the Absolute Maximum Rating ...