BF990A

DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET FEATURES Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS RF applications such as: – Television tuners with 12 V supply voltage – Professional communication equipment. PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 drain gate 2 gate 1 DESCRIPTION source Top view Marking code: M87. MAM039 handbook, halfpage BF990A DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. 4 3 g2 g1 d 1 2 s,b Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj Y fs Cig1-s Crs F PARAMETER drain-source voltage drain current total power dissipation junction temperature transfer admittance feedback capacitance noise figure f = 1 kHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V up to Tamb = 60 °C CONDITIONS − − − − 19 TYP. MAX. 18 30 200 150 − 3 − 3 UNIT V mA mW °C mS pF fF dB input capacitance at gate 1 f = 1 MHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 2.6 f = 1 MHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 25 f = 800 MHz; GS = 5 mS; BS = BSopt; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 2 April 1991 2 Philips Semiconductors Product specification N-channel dual-gate MOS-FET LIMITING VALUES In according with the A...