BF995

Silicon N Channel MOSFET Tetrode q BF 995 For input and mixer stages in FM and VHF TV tuners Type BF 995 Marking MB Ordering Code (tape and reel) Q62702-F936 Pin Configuration 1 2 3 4 S D G2 G1 Package1) SOT-143 Maximum Ratings Parameter Drain-source voltage Drain current Gate 1/gate 2 peak source current Total power dissipation, TS < 76 ˚C Storage temperature range Channel temperature Thermal Resistance Junction - soldering point Rth JS < 370 K/W Symbol VDS ID ± Values 20 30 10 200 150 Unit V mA mW IG1/2SM Ptot Tstg Tch – 55 … + 150 ˚C 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BF 995 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Drain-source breakdown voltage ID = 10 µA, – VG1S = – VG2S = 4 V Gate 1 source breakdown voltage ± IG1S = 10 mA, VG2S = VDS = 0 Gate 2 source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 Gate 1 source leakage current ± VG1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ± VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V Gate 1 source pinch-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off voltage VDS = 15 V, VG1S = 0, ID = 20 µA V(BR) DS ± ± ± ± Values typ. max. Unit 20 8.5 8.5 – – 4 – – – – – – – – – – – 14 14 50 50 20 2.5 2.0 V V(BR) G1SS V(BR) G2SS IG1SS IG2SS nA IDSS – VG1S (p) – VG2S (p) mA V Semiconductor Group 2 BF 995 Electrical Characteristics at ...