BF996S

DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET FEATURES Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS RF applications such as: – UHF television tuners – Professional communication equipment. PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 Top view Marking code: MHp. MAM039 handbook, halfpage BF996S DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. 4 3 g2 g1 d DESCRIPTION 1 2 s,b Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj Y fs Cig-1s Crs F PARAMETER drain-source voltage drain current total power dissipation junction temperature transfer admittance feedback capacitance noise figure f = 1 kHz; ID = 10 mA; VDS = 15 V; VG2−S = 4 V up to Tamb = 60 °C CONDITIONS − − − − 18 TYP. MAX. 20 30 200 150 − 2.6 − − UNIT V mA mW °C mS pF fF dB input capacitance at gate 1 f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2−S = 4 V 2.3 f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2−S = 4 V 25 f = 200 MHz GS = 2 mS; BS = BSopt; ID = 10 mA; VDS = 15 V; VGS−2 = 4 V 1 April 1991 2 Philips Semiconductors Product specification N-channel dual-gate MOS-FET LIMITING VALUES In accordance with the Absolute Maximum Ra...