2SC2881

Production specification NPN Silicon Epitaxial Planar Transistor FEATURES  High voltage:VCEO=120V  High transition frequency;fT=120MHz.  PC=500mW.  Complements the 2SA1201. Pb Lead-free 2SC2881 APPLICATIONS  Power and voltage amplifier application. ORDERING INFORMATION Type No. Marking 2SC2881 CO1/CY1 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC IB PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base current Collector Dissipation Junction and Storage Temperature 120 120 5 0.8 0.16 500 -55 to +150 Units V V V A A mW ℃ E026 Rev.A www.gmesemi.com 1 Production specification NPN Silicon Epitaxial Planar Transistor 2SC2881 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 120 V Collector-em...