BF997

DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET FEATURES Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source Integrated drain resistance to suppress oscillation in the frequency range greater than 1 GHz. APPLICATIONS UHF and VHF applications such as: – UHF/VHF television tuners – Professional communication equipment Especially intended for use in pre-amplifiers in CATV tuners with a large tuning range up to 500 MHz. 1 2 BF997 DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. handbook, halfpage 4 3 g 2 g1 d PINNING Top view MAM039 s,b PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION Marking code: MKp. Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj Y fs Cig1-s Crs F PARAMETER drain-source voltage drain current total power dissipation junction temperature transfer admittance feedback capacitance noise figure f = 1 kHz; ID = 10 mA; VDS = 15 V; VG2-S = 4 V up to Tamb = 60 °C CONDITIONS − − − − 18 TYP. MAX. 20 30 200 150 − − − − UNIT V mA mW °C mS pF fF dB input capacitance at gate 1 f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2-S = 4 V 2.5 f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2-S = 4 V 25 f = 200 M...