Silicon N Channel MOSFET Tetrode
Silicon N Channel MOSFET Tetrode
q q
BF 997
Integrated suppression network against spurious VHF oscillations For VHF a...
Description
Silicon N Channel MOSFET Tetrode
q q
BF 997
Integrated suppression network against spurious VHF oscillations For VHF applications, especially in TV tuners with extended VHF band, e. g. in CATV tuners
Type BF 997
Marking MK
Ordering Code (tape and reel) Q62702-F1055
Pin Configuration 1 2 3 4 S D G2 G1
Package1) SOT-143
Maximum Ratings Parameter Drain-source voltage Drain current Gate 1/gate 2 peak source current Total power dissipation, TS < 76 ˚C Storage temperature range Channel temperature Thermal Resistance Junction - soldering point Rth JS < 370 K/W Symbol VDS ID
±
Values 20 30 10 200 150
Unit V mA mW
IG1/2SM
Ptot Tstg Tch
– 55 … + 150 ˚C
1)
For detailed information see chapter Package Outlines..
Semiconductor Group
1
07.94
BF 997
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Drain-source breakdown voltage ID = 10 µA, – VG1S = – VG2S = 4 V Gate 1 source breakdown voltage ± IG1S = 10 mA, VG2S = VDS = 0 Gate 2 source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 Gate 1 source leakage current ± VG1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ± VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V Gate 1 source pinch-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off voltage VDS = 15 V, VG1S = 0, ID = 20 µA V(BR) DS
± ± ± ±
Values typ. max.
Unit
20 8.5 8.5 – – 2 – –
– – – – – – – –
– 14 14 50 50 20 2.5 2.0
V
V(BR) G1SS V(BR) G2SS IG1S...
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