N-Channel Dual Gate MOS-Fieldeffect Tetrode
BF998/BF998R/BF998RW
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensit...
Description
BF998/BF998R/BF998RW
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling.
Applications
Input and mixer stages in UHF tuners.
Features
D D D D
Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance
D Low input capacitance D High AGC-range D High gain
2
1
1
2
94 9279
13 579
94 9278
95 10831
3
4
4
3
BF998 Marking: MO Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
BF998R Marking: MOR Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
1
2
13 654
13 566
4
3
BF998RW Marking: WMO Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85011 Rev. 4, 23-Jun-99
www.vishay.de FaxBack +1-408-970-5600 1 (9)
BF998/BF998R/BF998RW
Vishay Telefunken Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Test Conditions Symbol Value VDS 12 ID 30 ±IG1/G2SM 10 ±VG1S/G2S 7 Ptot 200 TCh 150 Tstg –65 to +150 Unit V mA mA V mW °C °C
Tamb ≤ 60 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W
Electrical D...
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