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BF998WR Dataheets PDF



Part Number BF998WR
Manufacturers NXP
Logo NXP
Description N-channel dual-gate MOS-FET
Datasheet BF998WR DatasheetBF998WR Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS • VHF and UHF applications with 12 V supply vol.

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DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS • VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Marking code: MB. BF998WR PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION d 3 4 g2 g1 2 1 s,b Top view MAM198 Fig.1 Simplified outline (SOT343R) and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj yfs Cig1-s Crs F drain current total power dissipation operating junction temperature forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure f = 1 MHz f = 800 MHz PARAMETER drain-source voltage CONDITIONS − − − − − − − − MIN. − − − − 24 2.1 25 1 TYP. MAX. 12 30 300 150 − − − − UNIT V mA mW °C mS pF fF dB 1997 Sep 05 2 Philips Semiconductors Product specification N-channel dual-gate MOS-FET LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS ID IG1 IG2 Ptot Tstg Tj Note 1. Device mounted on a printed-circuit board. PARAMETER drain-source voltage drain current gate 1 current gate 2 current total power dissipation storage temperature operating junction temperature up to Tamb = 45 °C; see Fig.2; note 1 CONDITIONS − − − − − −65 − MIN. BF998WR MAX. 12 30 ±10 ±10 300 +150 +150 V UNIT mA mA mA mW °C °C MLD154 handbook, halfpage 400 Ptot (mW) 300 200 100 0 0 50 100 150 200 Tamb ( oC) Fig.2 Power derating curve. 1997 Sep 05 3 Philips Semiconductors Product specification N-channel dual-gate MOS-FET THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Notes 1. Device mounted on a printed-circuit board. 2. Ts is the temperature at the soldering point of the source lead. STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL V(BR)G1-SS V(BR)G2-SS V(P)G1-S V(P)G2-S IDSS IG1-SS IG2-SS PARAMETER gate 1-source breakdown voltage gate 2-source breakdown voltage gate 1-source cut-off voltage gate 2-source cut-off voltage drain-source current gate 1 cut-off current gate 2 cut-off current CONDITIONS VG2-S = VDS = 0; IG1-S = 10 mA VG1-S = VDS = 0; IG2-S = 10 mA VG2-S = 4 V; VDS = 8 V; ID = 20 µA VG1-S = 0; VDS = 8 V; ID = 20 µA VG2-S = 4 V; VDS = 8 V; VG1.


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