BFC505

DISCRETE SEMICONDUCTORS DATA SHEET BFC505 NPN wideband cascode transistor Product specification Supersedes data of 1995 Sep 01 File under Discrete Semiconductors, SC14 1996 Oct 08 Philips Semiconductors Product specification NPN wideband cascode transistor FEATURES Small size High power gain at low bias current and high frequencies High reverse isolation Low noise figure Gold metallization ensures excellent reliability Minimum operating voltage VC2−E1 = 1 V. APPLICATIONS Low voltage, low current, low noise and high gain amplifiers Oscillator buffer amplifiers Wideband voltage-to-current converters. b1 handbook, halfpage BFC505 PINNING - SOT353 PIN 1 2 3 4 5 SYMBOL b2 e1 b1 c1/e2 c2 base 2 emitter 1 base 1 collector 1/emitter 2 collector 2 DESCRIPTION 5 4 b2 c2 c1/e2 DESCRIPTION Cascode amplifier with two discrete dies in a surface mount, 5-pin SOT353 (S-mini) package. The amplifier is primarily intended for low power RF communications equipment, such as pagers and has a very low feedback capacitance resulting in high isolation. 1 Top view 2 3 e1 MAM212 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA b2 connected to ground via 1 nF (0603) capacitor, e1 connected directly to ground. SYMBOL Cre s 21 ⁄ s 12 MSG F 2 PARAMETER feedback capacitance CB1−C2 maximum isolation maximum stable power gain noise figure CONDITIONS Ie = 0; VC2-E1 = 0; f = 1 MHz IC = 5 mA; VC2 = VB2 = 3 V; f = 900 MHz IC = 0.5 mA; VC2 = VB2 = 1 V; f = 900 MHz; Tamb = ...