Document
DISCRETE SEMICONDUCTORS
DATA SHEET
BFC520 NPN wideband cascode transistor
Product specification Supersedes data of 1996 Oct 08 File under Discrete Semiconductors, SC14 1997 Sep 10
Philips Semiconductors
Product specification
NPN wideband cascode transistor
FEATURES • Small size • High power gain at low bias current and high frequencies • High reverse isolation • Low noise figure • Gold metallization ensures excellent reliability • Minimum operating voltage VC2−E1 = 1 V. APPLICATIONS • Low noise, high gain amplifiers • Oscillator buffer amplifiers • Wideband voltage-to-current converters.
b1
BFC520
PINNING - SOT353 SYMBOL b2 e1 b1 c1/e2 c2 PIN 1 2 3 4 5 base 2 emitter 1 base 1 collector 1/emitter 2 collector 2 DESCRIPTION
handbook, halfpage
5
4 b2
c2
c1/e2
DESCRIPTION Cascode amplifier with two discrete dies in a surface mount, 5-pin SOT353 (S-mini) package. The amplifier is primarily intended for low power RF communications equipment, such as pagers and cordless phones and has a very low feedback capacitance resulting in high isolation.
1 Top view
2
3 e1
MAM212
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA VC2−E1 = 3 V; IC = 20 mA; VB2 = 2.1 V; b2 connected to ground via 1 nF (0603) capacitor, e1 connected directly to ground. SYMBOL Cre s 21 ⁄ s 12 MSG F Rth j-s
2
PARAMETER feedback capacitance CB1−C2 maximum isolation maximum stable power gain (narrowband) noise figure thermal resistance from junction to soldering point
CONDITIONS f = 900 MHz; Tamb = 25 °C f = 2 GHz; Tamb = 25 °C f = 900 MHz; Tamb = 25 °C f = 2 GHz; Tamb = 25 °C IC = 5 mA; f = 900 MHz; ΓS = Γopt single loaded double loaded
MIN. − − − − − − − −
TYP. − −63 −38 31 19 1.3 − −
MAX. 10 − − − − 1.6 230 115
UNIT fF dB dB dB dB dB K/W K/W
1997 Sep 10
2
Philips Semiconductors
Product specification
NPN wideband cascode transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. − − − − up to Ts = 60 °C; note 1 − −65 −
BFC520
MAX.
UNIT
Any single transistor VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature open emitter open base open collector 20 8 2.5 70 1 +175 175 V V V mA W °C °C
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point; note 1 single loaded double loaded CONDITIONS VALUE 230 115 UNIT K/W K/W
Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin.
1997 Sep 10
3
Philips Semiconductors
Product specification
NPN wideband cascode transistor
CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IC = 2.5 µA; IE = 0 IE = 2.5 µA; IC = 0 IE = 0; VCB = 6 V IC = 20 mA; VCE = 6 V IC = 20 mA; VC2-E1 = 3 V; f = 1 GHz IE = ie = 0; VC2-B2 = 1 V; f = 1 MHz IC = 0; VC2-E1 = 3 V; f = 1 MHz IC = 0; VC2-E1 = 3 V; f = 1 MHz MIN. TYP. − − − − 120
BFC520
MAX. − − − 50 250 − − − 10 − − − − − − 1.6 −
UNIT
DC characteristics of any single transistor V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE fT Cc Cre2 Cre MSG collector-base breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain 20 8 2.5 − 60 − − − − − − − − − − − − V V V nA collector-emitter breakdown voltage IC = 10 µA; IB = 0
AC characteristics of the cascode configuration transition frequency collector capacitance T2 feedback capacitance T2 feedback capacitance 7 0.55 500 − 31 19 17 13 63 38 1.3 −18 GHz pF fF fF dB dB dB dB dB dB dB dBm
maximum stable power gain; note 1 IC = 20 mA; VC2-E1 = 3 V; f = 900 MHz; Tamb = 25 °C IC = 20 mA; VC2-E1 = 3 V; f = 2 GHz; Tamb = 25 °C
s 21
2
insertion power gain
IC = 20 mA; VC2-E1 = 3 V; f = 900 MHz; Tamb = 25 °C IC = 20 mA; VC2-E1 = 3 V; f = 2 GHz; Tamb = 25 °C
s 21 ⁄ s 12 F IP3 Notes
2
maximum isolation; note 2 noise figure third order intercept point (input)
f = 900 MHz f = 2 GHz IC = 5 mA; VC2-E1 = 3 V; f = 900 MHz; ΓS = Γopt note 3
2 1. MSG = s 12 ⁄ s 21 × k – k – 1
2 2 2 1 + s 11 × s 22 – s 12 × s 21 – s 11 – s 22 k = ---------------------------------------------------------------------------------------------------------------2 × s 12 × s 21
2. Maximum isolation is defined as the isolation when S21 of the amplifier is reduced to unity (buffer application). 3. IC =5 mA; VCE = 3 V; RS = 50 Ω; ZL = opt; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 904 MHz.
1997 Sep 10
4
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC520
handbook, halfpage
1.5
MBG228
handbook, halfpage
12
MBG219
VC2-E1 = 12 V
Ptot (mW) double loaded 1
fT (GHz) 9V 8 6V
single loaded 0.5 4
3V
0 0 50 100 150 Ts (oC) 200
0 1 10 IC (mA)
102
f = 1 GHz; Tamb = 25 °C.
Fig.2
Power derating as a function of soldering point temperature; typical values.
Fig.3
Transition frequency as a function of co.