BFE505

DISCRETE SEMICONDUCTORS DATA SHEET BFE505 NPN wideband differential transistor Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14 1996 Oct 08 Philips Semiconductors Product specification NPN wideband differential transistor FEATURES Small size High power gain at low bias current and voltage Temperature matched Balanced configuration hFE matched Continues to operate at VCE < 1 V. APPLICATIONS Single balanced mixers Balanced amplifiers Balanced oscillators. DESCRIPTION Emitter coupled dual NPN silicon RF transistor in a surface mount, 5-pin SOT353 (S-mini) package. The transistor is primarily intended for applications in the RF front end as a balanced mixer, a differential amplifier in analog and digital cellular phones, and in cordless phones, pagers and satellite TV-tuners. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. − − − − − 60 − − TYP. 4 Top view 5 e handbook, halfpage BFE505 PINNING - SOT353B SYMBOL b1 e b2 c2 c1 PIN 1 2 3 4 5 base 1 emitter base 2 collector 2 collector 1 DESCRIPTION 3 2 1 c1 b1 c2 b2 MAM211 Fig.1 Simplified outline and symbol. MAX. UNIT Any single transistor Cre MSG/Gmax F feedback capacitance CBC maximum power gain noise figure Ie = 0; VCB = 3 V; f = 1 MHz IC = 5 mA; VCE = 3 V; f = 900 MHz IC = 5 mA; VCE = 3 V; f = 2 GHz IC = 2 mA; VCE = 3 V; f = 900 MHz; ΓS = Γopt IC = 3 mA; VCE = 3 V; f = 2 GHz; ΓS = Γopt hFE Rth j-s DC current gain thermal resistance from junction to s...