BFG10

DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31 Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES High power gain High efficiency Small size discrete power amplifier 1.9 GHz operating area Gold metallization ensures excellent reliability. APPLICATIONS Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. PINNING PIN DESCRIPTION BFG10; BFG10/X BFG10 (see Fig.1) 1 2 3 4 collector base emitter emitter handbook, 2 columns 4 3 1 Top view 2 MSB014 BFG10/X (see Fig.1) 1 2 3 4 MARKING TYPE NUMBER BFG10 BFG10/X CODE N70 N71 collector emitter base emitter Fig.1 SOT143. QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7). MODE OF OPERATION Pulsed, class-AB, duty cycle: < 1 : 8 f (GHz) 1.9 VCE (V) 3.6 PL (mW) 200 Gp (dB) ≥5 ηc (%) ≥50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction temperatu...