BFG10W

DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 22 Philips Semiconductors UHF power transistor Product specification BFG10W/X FEATURES High efficiency Small size discrete power amplifier 900 MHz and 1.9 GHz operating areas Gold metallization ensures excellent reliability. APPLICATIONS Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. PINNING PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter fpage 4 3 1 Top view 2 MBK523 Marking code: T5. Fig.1 SOT343. QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common-emitter test circuit. MODE OF OPERATION f (GHz) Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms Pulsed, class-AB, duty cycle: < 1 : 8; tp = 4.6 ms 1.9 0.9 0.9 VCE (V) 3.6 6 6 PL (mW) 200 650 360 Gp (...