Dual N-Channel Enhancement Mode MOSFET
T echcode®
Dual
N-Channel
Enhancement
Mode
MOSFET
DATASHEET
TDM3514
DESCRIPTION
The TDM3514 uses ad...
Description
T echcode®
Dual
N-Channel
Enhancement
Mode
MOSFET
DATASHEET
TDM3514
DESCRIPTION
The TDM3514 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
20V/9.7A, RDS(ON) < 9.9mΩ @ VGS=2.5V RDS(ON) < 8.7mΩ @ VGS=3.1V RDS(ON) < 8.2mΩ @ VGS=3.7V RDS(ON) < 7.9mΩ @ VGS=4.0V RDS(ON) < 7.5mΩ @ VGS=4.0V
ESD protection Lead free product is available DFN2X3A‐6_EP package
Application
PWM applications One Cell Li‐ion Battery Park Power management
Top of view of DFN2X3A‐6_EP
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source Voltage
VDS
Gate‐Source Voltage
VGS
Diode Continuous Forward Current
IS(TA=25...
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