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Mode MOSFET. TDM3478 Datasheet |
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T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3478 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
GENERAL FEATURES
RDS(ON) < 9.7mΩ @ VGS=4.5V
RDS(ON) < 6mΩ @ VGS=10V
High Power and current handling capability
ESD Protection
Surface Mount Package
Lead Free and Green Devices available(RoHS Compliant)
Application
PWM applications
Load switch
Power management
Powered Systems
DATASHEET
TDM3478
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source Voltage
VDS
Gate‐Source Voltage
VGS
Drain Current @ Continuous
ID（Tc=25℃）
ID（Tc=100℃）
Drain Current @ Current‐Pulsed (Note 1)
IDP（TC=25℃）
Maximum Power Dissipation
PD (TC=25℃)
PD (TC=100℃)
Drain Current @ Continuous
ID（TA=25℃）
ID（TA=70℃）
Maximum Power Dissipation
PD(TA=25℃)
PD(TA=70℃)
Thermal Resistance,Junction‐to‐Ambient (Note 2)
RθJA(t≤10s)
RθJA(Steady State)
Thermal Resistance,Junction‐to‐Case
RθJC(Steady State)
Maximum Operating Junction Temperature
TJ
Storage Temperature Range
TSTG
Limit
30
+20
54
34
100
26.6
10.6
15.2
12.1
2.08
1.3
40
60
4.7
150
‐55 To 150
Unit
V
V
A
W
A
W
℃/W
℃/W
℃
℃
July 15, 2015 Techcode Semiconductor Limited www.techcodesemi.com
1
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T echcode®
N-Channel
Enhancement
Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
DATASHEET
TDM3478
Parameter
Symbol Condition
Min Typ
OFF CHARACTERISTICS
Drain‐Source Breakdown Voltage
BVDSS VGS=0V ID=250μA
30 ‐
Zero Gate Voltage Drain Current
IDSS VDS=24V,VGS=0V
‐ ‐
Gate‐Body Leakage Current
IGSS VGS=±20V,VDS=0V
‐ ‐
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=250μA
1.4 1.7
Drain‐Source On‐State Resistance
RDS(ON) VGS=4.5V, ID=9A
‐ 7.5
VGS=10V, ID=12A
‐
TJ=125℃ ‐
5
7.6
DYNAMIC CHARACTERISTICS (Note3)
Gate Resistance
RG VGS=0V,VDS=0V,F=1MHz
‐ 1.8
Input Capacitance
Ciss VDS=15V,VGS=0V, F=1.0MHz
‐ 750
Output Capacitance
Coss
‐ 530
Reverse Transfer Capacitance
Crss
‐ 37
SWITCHING CHARACTERISTICS (Note 3)
Turn‐on Delay Time
td(on)
VDS=15V, RL=15Ω, VGEN=10V,RG=1Ω ‐
7.8
Turn‐on Rise Time
tr ID=1A
‐ 8.4
Turn‐Off Delay Time
td(off)
‐ 18
Turn‐Off Fall Time
tf
‐ 17
Total Gate Charge
Qg VDS=15V,ID=12A,VGS=4.5V
‐ 5.5
Gate‐Source Charge
Qgs
‐ 1.9
Gate‐Drain Charge
Qgd
‐ 2.2
Body Diode Reverse Recovery Time
Trr
IF=5A, dI/dt=100A/μs
‐ 11
Body Diode Reverse Recovery Charge Qrr
‐ 13
DRAIN‐SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 2)
VSD VGS=0V,IS=10A
‐ 0.8
NOTES:
1. Pulse width limited by max. junction temperature.
2. RθJA steady state=999s. RθJA is measured with the device mounted on 1in2, Fr‐4 board with 2oz.Copper
3. Guaranteed by design, not subject to production testing
Max
‐
1
±10
2.5
9.7
6
‐
3
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
1.1
Unit
V
μA
μA
V
mΩ
Ω
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
nS
nC
V
July 15, 2015 Techcode Semiconductor Limited www.techcodesemi.com
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T echcode®
N-Channel
Enhancement
Mode
MOSFET
Typical Operating Characteristics
DATASHEET
TDM3478
July 15, 2015 Techcode Semiconductor Limited www.techcodesemi.com
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