2N AND 2P-CHANNEL Enhancement Mode MOSFET
T echcode®
2N
AND
2P-CHANNEL
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3411 uses advanced trench ...
Description
T echcode®
2N
AND
2P-CHANNEL
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3411 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
N CHANNEL RDS(ON) < 35mΩ @ VGS=4.5V RDS(ON) < 31mΩ @ VGS=10V
P CHANNEL RDS(ON) < 43mΩ @ VGS=‐4.5V RDS(ON) < 33mΩ @ VGS=‐10V
High Power and current handling capability Lead free product is available SOP‐8 Package
Application
PWM applications Load switch Power management Hard Switched and High Frequency Circuits
DATASHEET
TDM3411
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source Voltage Gate‐Source Voltage
Drain Current @ Continuous
Drain Current @ Current‐Pulsed (N...
Similar Datasheet