BFG11

DISCRETE SEMICONDUCTORS DATA SHEET BFG11; BFG11/X NPN 2 GHz RF power transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Apr 07 Philips Semiconductors Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES High power gain High efficiency Small size discrete power amplifier 1.9 GHz operating area Gold metallization ensures excellent reliability. APPLICATIONS Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. PINNING PIN BFG11 (see Fig.1) 1 2 3 4 collector base emitter emitter 1 Top view BFG11; BFG11/X DESCRIPTION NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. MARKING TYPE NUMBER BFG11 BFG11/X CODE N72 N73 DESCRIPTION handbook, 2 columns 4 3 2 MSB014 BFG11/X (see Fig.1) 1 2 3 4 collector emitter base emitter Fig.1 SOT143. QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7). MODE OF OPERATION Pulsed, class-AB, duty cycle < 1 : 8 f (GHz) 1.9 VCE (V) 3.6 PL (mW) 400 Gp (dB) ≥4 ηc (%) ≥50 1995 Apr 07 2 Philips Semiconductors Product specification NPN 2 GHz RF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipat...