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Mode MOSFET. TDM3508 Datasheet |
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T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3508 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
GENERAL FEATURES
RDS(ON) < 9.8mΩ @ VGS=4.5V
RDS(ON) < 7.0mΩ @ VGS=10V
High Power and current handling capability
Lead free product is available
Surface Mount Package
Application
PWM applications
Load switch
Power management
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Drain‐Source Voltage
Gate‐Source Voltage
Drain Current @ Continuous
Drain Current @ Current‐Pulsed (Note 1)
Maximum Power Dissipation
Drain Current @ Continuous
Maximum Power Dissipation
Maximum Operating Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID（TC=25℃）
ID（TC=100℃）
IDM（TC=25℃）
PD(TC=25℃)
PD(TC=100℃)
ID（TA=25℃）
ID（TA=70℃）
PD(TA=25℃)
PD(TA=70℃)
TJ
TSTG
Limit
30
+20
60
38
120
30
12
17
13.5
2.5
1.6
150
‐55 To 150
DATASHEET
TDM3508
Unit
V
V
A
A
A
W
W
A
A
W
W
℃
℃
October 15, 2015 Techcode Semiconductor Limited www.techcodesemi.com
1
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T echcode®
N-Channel
Enhancement
Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
DATASHEET
TDM3508
Parameter
Symbol Condition
Min
OFF CHARACTERISTICS
Drain‐Source Breakdown Voltage
BVDSS VGS=0V ID=250μA
30
Zero Gate Voltage Drain Current
IDSS VDS=24V,VGS=0V
‐
Gate‐Body Leakage Current
IGSS VGS=±20V,VDS=0V
‐
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=250μA
1.4
Drain‐Source On‐State Resistance
RDS(ON) VGS=4.5V, ID=10A
‐
VGS=10V, ID=15A
‐
TJ=100°C
‐
DYNAMIC CHARACTERISTICS (Note4)
Gate Resistance
RG VDS=0V,VGS=0V, F=1.0MHz
‐
Input Capacitance
Ciss VDS=15V,VGS=0V, F=1.0MHz
‐
Output Capacitance
Coss
‐
Reverse Transfer Capacitance
Crss
‐
SWITCHING CHARACTERISTICS (Note 3)
Turn‐on Delay Time
td(on)
VDS=15V, RL=15Ω, VGEN=10V,RG=1Ω ‐
Turn‐on Rise Time
tr ID=1A
‐
Turn‐Off Delay Time
td(off)
‐
Turn‐Off Fall Time
tf
‐
Total Gate Charge
Qg VDS=15V,ID=15A,VGS=4.5V
‐
Gate‐Source Charge
Qgs
‐
Gate‐Drain Charge
Qgd
‐
Body Diode Reverse Recovery Time
Trr
IF=5A, dI/dt=100A/μs
‐
Body Diode Reverse Recovery Charge Qrr
‐
DRAIN‐SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 2)
VSD VGS=0V,IS=10A
‐
NOTES:
1. Pulse width limited by max. junction temperature.
2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
3. Guaranteed by design, not subject to production testing
Typ
‐
‐
‐
1.7
8.8
6.45
8.8
1.6
780
510
39
11
8
19.6
17
5.8
3
1.5
25
11.8
0.8
Max
‐
1
±10
2.5
9.8
7.0
‐
2.5
1100
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
1.1
Unit
V
μA
μA
V
mΩ
mΩ
mΩ
Ω
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
nS
nC
V
October 15, 2015 Techcode Semiconductor Limited www.techcodesemi.com
2
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T echcode®
N-Channel
Enhancement
Mode
MOSFET
Package Information
TO252-2 Package
DATASHEET
TDM3508
October 15, 2015 Techcode Semiconductor Limited www.techcodesemi.com
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