N-Channel Enhancement Mode MOSFET
T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3466 uses advanced trench technolog...
Description
T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
RDS(ON) < 2.45mΩ @ VGS=4.5V
RDS(ON) < 1.9mΩ @ VGS=10V High Power and current handing capability Lead free product is acquired Surface Mount Package
Application
PWM applications Load switch Power management
DATASHEET
TDM3466
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source Voltage
VDS
Gate‐Source Voltage
VGS
Drain Current @ Current‐Pulsed
IDM(TC=25℃)
ID(TC=25℃)
Drain Current @ Continuous
ID(TC=25℃)
ID(TC=100℃)
Maximum Power Dissipation
PD(TC=25℃) ...
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