Document
T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3432 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
RDS(ON) < 4.1mΩ @ VGS=4.5V
RDS(ON) < 3.1mΩ @ VGS=10V High Power and current handling capability Lead free product is available Surface Mount Package
Application
PWM applications Load switch Power management
DATASHEET
TDM3432
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source Voltage
VDS
Gate‐Source Voltage
VGS
Drain Current @ Continuous
ID(TA=25℃) ID(TA=70℃)
Drain Current @ Current‐Pulsed (Note 1)
IDM(TC=25℃)
Drain Current @ Continuous
ID(TC=25℃) ID(T.