N-Channel Enhancement Mode MOSFET
T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM31056 uses advanced trench technolog...
Description
T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM31056 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
RDS(ON) < 18.2mΩ @ VGS=4.5V RDS(ON) < 13.5mΩ @ VGS=10V
High Power and current handling capability Lead free product is available DFN5X6‐8 Package
Application
PWM applications Load switch Power management Hard Switched and High Frequency Circuits
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source Voltage
VDS
Gate‐Source Voltage
VGS
Diode Continuous Forward Current Drain Current @ Continuous
IS(TC=25℃) ID(TC=25℃) ID(TC=100℃)
Pulsed Drain Current Maximum Power Dissipation
...
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