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Mode MOSFET. TDM31210 Datasheet |
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T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM31210 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
GENERAL FEATURES
RDS(ON) < 8.4mΩ @ VGS=10V
High Power and current handling capability
Lead free product is available
TO220 Package
Application
PWM applications
Load switch
Power management
Hard Switched and High Frequency Circuits
DATASHEET
TDM31210
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source Voltage
VDS
Gate‐Source Voltage
VGS
Diode Continuous Forward Current
Drain Currents Forward Current
IS（TC=25℃）
ID（TC=25℃）
Drain Current @ Current‐Pulsed (Note 1)
IDM（TC=25℃）
Drain Current @ Continuous
ID（TA=25℃）
ID（TA=70℃）
Maximum Power Dissipation
PD（TC=25℃）
PD（TC=100℃）
Maximum Power Dissipation
PD(TA=25℃)
PD(TA=70℃)
Avalanche Current, Single pulse(L=0.5mH)
IAS
Avalanche Energy, Single pulse(L=0.5mH)
EAS
Thermal Resistance,Junction‐to‐Ambient (Note 1)
RθJA(Steady State)
Thermal Resistance,Junction‐to‐Case
RθJC
Maximum Operating Junction Temperature
TJ
Storage Temperature Range
TSTG
Limit
120
+25
80
120
400
11
9
250
100
2
1.25
45
500
62.5
0.5
150
‐55 To 150
Unit
V
V
A
A
A
A
A
W
W
W
W
A
mJ
℃/W
℃/W
℃
℃
March 24, 2016 Techcode Semiconductor Limited www.techcodesemi.com
1
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T echcode®
N-Channel
Enhancement
Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
DATASHEET
TDM31210
Parameter
Symbol Condition
Min
OFF CHARACTERISTICS
Drain‐Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate‐Body Leakage Current
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=96V,VGS=0V
VGS=±20V,VDS=0V
120
‐
‐
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=250μA
2
Drain‐Source On‐State Resistance
RDS(ON) VGS=10V, ID=40A
‐
DYNAMIC CHARACTERISTICS (Note3)
Gate Resistance
Input Capacitance
Output Capacitance
RG VDS=0V,VGS=0V, F=1.0MHz
Ciss VDS=30V,VGS=0V, F=1.0MHz
Coss
‐
‐
‐
Reverse Transfer Capacitance
Crss
‐
SWITCHING CHARACTERISTICS (Note 3)
Turn‐on Delay Time
Turn‐on Rise Time
td(on)
tr
VDS=30V, RL=30Ω, VGEN=10V,RG=6Ω ‐
ID=1A
‐
Turn‐Off Delay Time
Turn‐Off Fall Time
Total Gate Charge
Gate‐Source Charge
td(off)
tf
Qg
Qgs
VDS=30V,ID=40A,VGS=10V
‐
‐
‐
‐
Gate‐Drain Charge
Qgd
‐
Body Diode Reverse Recovery Time
Trr
IF=40A, dI/dt=100A/μs
‐
Body Diode Reverse Recovery Charge Qrr
‐
DRAIN‐SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 2)
VSD VGS=0V,IS=20A
NOTES:
1. Pulse width limited by max. junction temperature.
2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
3. Guaranteed by design, not subject to production testing
‐
Typ Max Unit
‐ ‐
V
‐ 1
μA
‐ ±100 nA
3 4
V
7 8.4 mΩ
1.0
6150
625
120
‐
8000
‐
‐
Ω
PF
PF
PF
26 47
10 18
92 166
55 99
100 140
29 ‐
19 ‐
56 ‐
140 ‐
nS
nS
nS
nS
nC
nC
nC
nS
nC
0.8 1.3 V
March 24, 2016 Techcode Semiconductor Limited www.techcodesemi.com
2
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T echcode®
N-Channel
Enhancement
Mode
MOSFET
Typical Operating Characteristics
DATASHEET
TDM31210
March 24, 2016 Techcode Semiconductor Limited www.techcodesemi.com
3
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