Document
T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM31210 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
RDS(ON) < 8.4mΩ @ VGS=10V High Power and current handling capability Lead free product is available TO220 Package
Application
PWM applications Load switch Power management Hard Switched and High Frequency Circuits
DATASHEET
TDM31210
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source Voltage
VDS
Gate‐Source Voltage
VGS
Diode Continuous Forward Current Drain Currents Forward Current
IS(TC=25℃) ID(TC=25℃)
Drain Current @ Current‐Pulsed (Note 1)
IDM(TC=25℃)
Drain Current @ Conti.