Document
BFG 135A
NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = 6 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 135A BFG135A Q62702-F1322 1=E 2=B 3=E 4=C
Package SOT-223
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 25 25 2 150 20 mW 1000 150 - 65 ... + 150 - 65 ... + 150 ≤ 50 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 100 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-16-1996
BFG 135A
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
15 120 -
V µA 100 nA 50 µA 1 80 250
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 25 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 100 mA, VCE = 8 V
Semiconductor Group
2
Dec-16-1996
BFG 135A
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
4.5 6 1.3 0.8 7.5 -
GHz pF 1.8 dB 2 3.7 -
IC = 100 mA, VCE = 8 V, f = 200 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb
-
VEB = 0.5 V, f = 1 MHz
Noise figure
F
IC = 30 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz
Power gain
2)
Gma
IC = 100 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 10 4 dBm 38 14 9 -
IC = 100 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz
Third order intercept point
IP3
IC = 100 mA, VCE = 8 V, f = 900 MHz ZS =ZL= 50 Ω
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-16-1996
BFG 135A
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
1200 mW 1000
Ptot
900 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 °C 150 TA ,TS
TS TA
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 2
10 2
RthJS
K/W
Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
Semiconductor Group
4
Dec-16-1996
BFG 135A
Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC)
VCE = Parameter
4.0
7.0 GHz
pF
6.0
10V
Ccb
3.0
fT
5.5 5.0
5V 3V 2V
2.5
4.5 4.0
2.0
3.5 3.0 1V
1.5
2.5 2.0 0.7V
1.0 1.5 0.5 0.0 0 4 8 12 16 V VR 22 1.0 0.5 0.0 0 20 40 60 80
100 120 140 mA 170 IC
Power Gain Gma, Gms = f(IC)
f = 0.9GHz VCE = Parameter
16
Power Gain Gma, Gms = f(IC)
f = 1.8GHz VCE = Parameter
11
dB
10V 5V 3V 2V
dB
G
12
G
9 8 7
10V 5V 3V
10
2V 6 8 1V 5 6 0.7V 4 3 2 2 1 0 0 20 40 60 80 100 120 140 mA 170 IC 0 0 20 40 60 80 100 120 140 mA 170 IC 0.7V 1V
4
Semiconductor Group
5
Dec-16-1996
BFG 135A
Power Gain Gma, Gms = f(VCE):_____
|S21 |2 = f(VCE):---------
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50Ω)
f = Parameter
15 dB IC=100mA 13 0.9GHz
VCE = Parameter, f = 900MHz
45
dBm
10V
8V
G
12 11 10 9 8 7 0.9GHz 1.8GHz
IP3
35 5V 30 3V 25 2V
6 5 4 3 2 1 0 0 2 4 6 8 V 12 15 10 0 20 1V
20
40
60
80
100
120
V CE
mA IC
160
Power Gain Gma, Gms = f(f)
VCE = Parameter
30
Power Gain |S21|2= f(f)
VCE = Parameter
30
IC=100mA
dB dB
IC=100mA
G
S21
20 20 15 15 10 10 5 10V 2V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 0.7 0 1V 2V 10V
5
0 0.0
-5 0.0
0.5
1.0
1.5
2.0
GHz f
3.0
Semiconductor Group
6
Dec-16-1996
.