BFG 135A
NPN Silicon RF Transistor
For low-distortion broadband amplifier
4
stages in antenna and telecommunication ...
BFG 135A
NPN Silicon RF
Transistor
For low-distortion broadband amplifier
4
stages in antenna and telecommunication systems up to 2 GHz at collector currents from 70 mA to 130 mA
Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 6 GHz
3 2 1
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFG 135A
Maximum Ratings Parameter
Marking BFG135A 1=E
Pin Configuration 2=B 3=E 4=C
Package SOT-223
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 15 25 25 2 150 20 1 150 -65 ... 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation , TS 100 °C F) Junction temperature Ambient temperature Storage temperature
mA W °C
Thermal Resistance Junction - soldering point RthJS
50
K/W
1T is measured on the collector lead at the soldering point to the pcb S
1
Oct-26-1999
BFG 135A
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 100 mA, VCE = 8 V hFE 80 120 250 IEBO 1 µA ICBO 50 nA ICES 100 µA V(BR)CEO 15 V Symbol min. Values typ. max. Unit
2
Oct-26-1999
BFG 135A
Electrical Characteristics at TA = 25°C,...