BFG198

DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors NPN 8 GHz wideband transistor DESCRIPTION PINNING NPN planar epitaxial transistor in a PIN DESCRIPTION plastic SOT223 envelope, intended for wideband amplifier applications. 1 emitter fpage The device features a high gain and 2 base excellent output voltage capabilities. 3 emitter 4 collector Product specification BFG198 4 1 2 3 Top view MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCBO VCEO IC Ptot hFE fT GUM Vo collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain output voltage open emitter open base up to Ts = 135 C (note 1) IC = 50 mA; VCE = 5 V; Tj = 25 C IC = 50 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 50 mA; VCE = 8 V; f = 500 MHz; Tamb = 25 C IC = 50 mA; VCE = 8 V; f = 800 MHz; Tamb = 25 C dim = 60 dB; IC = 70 mA; VCE = 8 V; RL = 75 ; Tamb = 25 C; f(p+qr) = 793.25 MHz MIN.     40  TYP.     90 8 MAX. 20 10 100 1   UNIT V V mA W GHz  18  dB  15  dB  700  mV LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction t...