BFG25AW

DATA SHEET book, halfpage M3D123 BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors Product specification Supersedes data of August 1995 1998 Sep 23 Philips Semiconductors Product specification NPN 5 GHz wideband transistors FEATURES Low current consumption (100 µA to 1 mA) Low noise figure Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers, such as pocket telephones and paging systems. DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain noise figure Ts ≤ 85 °C IC = 0.5 mA; VCE = 1 V IC = 0; VCE = 1 V; f = 1 MHz open emitter open base CONDITIONS PINNING PIN BFG25AW 1 2 3 4 collector base emitter emitter DESCRIPTION BFG25AW; BFG25AW/X fpage 4 3 1 Top view 2 MBK523 BFG25AW/X 1 2 3 4 collector emitter base emitter Fig.1 SOT343N. MARKING TYPE NUMBER BFG25AW BFG25AW/X CODE N6 V1 MIN. − − − − 50 − − − TYP. − − − − 80 0.2 5 16 2 MAX. UNIT 8 5 6.5 500 200 0.3 − − − pF GHz dB dB V V mA mW IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C 3.5 IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C Γs = Γopt; IC = 1 mA; VCE = 1 V; f = 1 GHz LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC ...