BFG31

DISCRETE SEMICONDUCTORS DATA SHEET BFG31 PNP 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 12 NXP Semiconductors PNP 5 GHz wideband transistor Product specification BFG31 FEATURES  High output voltage capability  High gain bandwidth product  Good thermal stability  Gold metallization ensures excellent reliability. DESCRIPTION PNP planar epitaxial transistor mounted in a plastic SOT223 envelope. It is intended for wideband amplifier applications. NPN complement is the BFG97. PINNING PIN 1 2 3 4 DESCRIPTION emitter base emitter collector QUICK REFERENCE DATA SYMBOL VCEO IC Ptot hFE PARAMETER collector-emitter voltage DC collector current total power dissipation DC current gain fT transition frequency GUM Vo maximum unilateral power gain output voltage CONDITIONS open base up to Ts = 135 C ; note 1 IC = 70 mA; VCE = 10 V; Tamb = 25 C IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 70 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature CONDITIONS open emitter open base open collector up to Ts = 135 C; note 1 Note 1. Ts is the temperature at the soldering point of the collector tab. ...