N-Channel MOSFET. SM4502NHKP Datasheet

SM4502NHKP MOSFET. Datasheet pdf. Equivalent

SM4502NHKP Datasheet
Recommendation SM4502NHKP Datasheet
Part SM4502NHKP
Description N-Channel MOSFET
Feature SM4502NHKP; SM4502NHKP ® N-Channel Enhancement Mode MOSFET Features • 30V/100A, RDS(ON)= 2mΩ (Max.) @ VGS=10.
Manufacture Sinopower
Datasheet
Download SM4502NHKP Datasheet




Sinopower SM4502NHKP
SM4502NHKP
®
N-Channel Enhancement Mode MOSFET
Features
30V/100A,
RDS(ON)= 2m(Max.) @ VGS=10V
R=
DS(ON)
3.2m
(Max.)
@
V =4.5V
GS
Reliable and Rugged
Lower Qg and Qgd for high-speed switching
Lower RDS(ON) to Minimize Conduction Losses
Lead Free and Green Devices Available
(RoHS Compliant)
100% UIS + Rg Tested
Pin Description
DDDD
S S SG
DFN5x6-8
(5,6,7,8)
DD DD
Pin 1
Applications
Power Management in Desktop Computer or
DC/DC Converters.
(4) G
SSS
( 1, 2, 3 )
N-Channel MOSFET
Ordering and Marking Information
SM4502NH
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM4502NH KP :
4502NH
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2015
1
www.sinopowersemi.com



Sinopower SM4502NHKP
SM4502NHKP
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±20 V
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
150
-55 to 150
60
°C
ID a Continuous Drain Current
IDM b Pulsed Drain Current
TC=25°C
TC=100°C
TC=25°C
100*
95
200
A
PD Maximum Power Dissipation
TC=25°C
TC=100°C
78
31.25
W
RθJC Thermal Resistance-Junction to Case
ID c Continuous Drain Current
Steady State
TA=25°C
TA=70°C
1.6 °C/W
27
A
21
PD c Maximum Power Dissipation
TA=25°C
TA=70°C
2.5
W
1.6
RθJA c Thermal Resistance-Junction to Ambient
t 10s
Steady State
20 °C/W
50
IAS d
EAS d
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
L=0.1mH
L=0.1mH
50 A
125 mJ
Note a,*Max. continue current is limited by bonding wire.
Note bPulse width is limited by max. junction temperature.
Note cRθJA steady state t=100s.
Note dUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2015
2
www.sinopowersemi.com



Sinopower SM4502NHKP
SM4502NHKP
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSSt
Drain-Source Breakdown Voltage
(transient)
Test Conditions
Min. Typ. Max. Unit
VGS=0V, IDS=250µA
VGS=0V, ID(aval)=50A
Tcase=25°C, ttransient=100ns
30
34
-
-
-V
-V
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
RDS(ON) e Drain-Source On-state Resistance
VGS=10V, IDS=25A
TJ=125°C
VGS=4.5V, IDS=15A
Gfs Forward Transconductance
Diode Characteristics
VDS=5V, IDS=15A
VSD e Diode Forward Voltage
ISD=25A, VGS=0V
trr Reverse Recovery Time
ta Charge Time
tb Discharge Time
ISD=25A, dlSD/dt=100A/µs
Qrr Reverse Recovery Charge
Dynamic Characteristics
RG
Ciss
Coss
Crss
td ( ON)
tr
t d (OFF )
tf
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15,
IDS=1A, VGEN=10V,
RG=6
Gate Charge Characteristics
Qg Total Gate Charge
VDS=15V, VGS=10V,
IDS=25A
Qg Total Gate Charge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS=4.5V,
IDS=25A
Qgd Gate-Drain Charge
Note ePulse test ; pulse width300µs, duty cycle2%.
-
-
1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-1
µA
- 30
1.8 2.5 V
- ±100 nA
1.6 2
2.3 - m
2.4 3.2
30 - S
0.8 1.1 V
36.8 -
17.2 -
ns
19.6 -
20.3 - nC
0.9
2617
1800
120
17.5
10
47.4
71
2
-
-
-
33
19
86
130
pF
ns
39 55
18.2 -
5-
8.9 -
4.4 -
nC
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2015
3
www.sinopowersemi.com







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