N-Channel MOSFET. SM4514NHKP Datasheet

SM4514NHKP MOSFET. Datasheet pdf. Equivalent

SM4514NHKP Datasheet
Recommendation SM4514NHKP Datasheet
Part SM4514NHKP
Description N-Channel MOSFET
Feature SM4514NHKP; SM4514NHKP ® N-Channel Enhancement Mode MOSFET Features • 30V/70A, RDS(ON)=3.4mΩ (Max.) @ VGS=10.
Manufacture Sinopower
Datasheet
Download SM4514NHKP Datasheet




Sinopower SM4514NHKP
SM4514NHKP
®
N-Channel Enhancement Mode MOSFET
Features
30V/70A,
RDS(ON)=3.4m(Max.) @ VGS=10V
RDS(ON)=5.5m
(Max.)
@
V =4.5V
GS
Reliable and Rugged
Lower Qg and Qgd for high-speed switching
Lower RDS(ON) to Minimize Conduction Losses
Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DDDD
S S SG
DFN5x6A-8_EP
(5,6,7,8)
DD DD
Pin 1
Applications
Power Management in Desktop Computer or
DC/DC Converters.
Power Load Switch.
Notebook Battery Management.
Ordering and Marking Information
(4) G
SSS
( 1, 2, 3 )
N-Channel MOSFET
SM4514NH
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6A-8_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM4514NH KP :
4514NH
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2015
1
www.sinopowersemi.com



Sinopower SM4514NHKP
SM4514NHKP
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Par ameter
Rating
Unit
Common Ratings
VD SS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±20 V
TJ
TSTG
IS
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TC=25°C
150
-55 to 150
20
°C
ID a Continuous Drain Current
TC=25°C
TC=100°C
70* A
56
PD Maximum Power Dissipation
TC=25°C
TC=100°C
46.3
W
18.5
RθJC Thermal Resistance-Junction to Case
IDM b Pulsed Drain Current
Steady State
TA=25°C
2.7 °C/W
80 A
ID c Continuous Drain Current
TA=25°C
TA=70°C
20.4
A
16.3
PD c Maximum Power Dissipation
TA=25°C
TA=70°C
2.08
W
1.33
RθJA c Thermal Resistance-Junction to Ambient
t 10s
Steady State
20 °C/W
60
IAS d
EAS d
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
L=0.1mH
L=0.1mH
30 A
45 mJ
Note a,*Max. continue current is limited by bonding wire.
Note bPulse width is limited by max. junction temperature.
Note cRθJA steady state t=999s.
Note dUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2015
2
www.sinopowersemi.com



Sinopower SM4514NHKP
SM4514NHKP
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSSt
Drain-Source Breakdown Voltage
(transient)
Test Conditions
Min. Typ. Max. Unit
VGS=0V, IDS=250µA
VGS=0V, ID(aval)=30A
Tcase=25°C, ttransient=100ns
30
34
-
-
-V
-V
IDSS Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
RDS(ON) e Drain-Source On-state Resistance
VGS=10V, IDS=20A
TJ=125°C
VGS=4.5V, IDS=15A
Gfs Forward Transconductance
Diode Characteristics
VDS=10V, IDS=5A
VSD e Diode Forward Voltage
ISD=20A, VGS=0V
trr Reverse Recovery Time
ta Charge Time
tb Discharge Time
ISD=20A, dlSD/dt=100A/µs
Qrr Reverse Recovery Charge
Dynamic Characteristics
RG
Ciss
Coss
Crss
td (O N )
tr
t d( OFF)
tf
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=12V, RL=2.1,
IDS=5.7A, VGEN=10V,
RG=2.9
Gate Charge Characteristics
Qg Total Gate Charge
VDS=15V, VGS=10V,
IDS=15A
Qg Total Gate Charge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS=4.5V,
IDS=20A
Qgd Gate-Drain Charge
Note ePulse test ; pulse width300µs, duty cycle2%.
-
-
1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-1
µA
- 30
1.8 2.5 V
- ±100 nA
2.8 3.4
4.2 - m
4.2 5.5
28 - S
0.82 1.1 V
21 -
13 - ns
8-
6.3 - nC
1
1350
900
65
14.3
26
24
4.4
2.2
-
-
-
-
-
-
-
pF
ns
20 30
9.2 -
2.7 - nC
6-
2-
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2015
3
www.sinopowersemi.com







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