N-Channel MOSFET. SM4513NHKP Datasheet

SM4513NHKP MOSFET. Datasheet pdf. Equivalent

SM4513NHKP Datasheet
Recommendation SM4513NHKP Datasheet
Part SM4513NHKP
Description N-Channel MOSFET
Feature SM4513NHKP; SM4513NHKP ® N-Channel Enhancement Mode MOSFET Features · 30V/70A, RDS(ON)= 2.7mW (Max.) @ VGS=10V.
Manufacture Sinopower
Datasheet
Download SM4513NHKP Datasheet




Sinopower SM4513NHKP
SM4513NHKP
®
N-Channel Enhancement Mode MOSFET
Features
· 30V/70A,
RDS(ON)= 2.7mW (Max.) @ VGS=10V
RDS(ON)= 3.5mW (Max.) @ VGS=4.5V
· Reliable and Rugged
· Lower Qg and Qgd for high-speed switching
· Lower RDS(ON) to Minimize Conduction Losses
· 100% UIS + Rg Tested
· Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DDDD
S S SG
DFN5x6A-8_EP
(5,6,7,8)
DD DD
Pin 1
Applications
· Power Management in Desktop Computer or
DC/DC Converters.
· Power Load Switch.
· Notebook Battery Management.
Ordering and Marking Information
(4) G
SSS
( 1, 2, 3 )
N-Channel MOSFET
SM4513NH
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6A-8_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM4513NH KP :
4513NH
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - August, 2017
1
www.sinopowersemi.com



Sinopower SM4513NHKP
SM4513NHKP
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
ID a Continuous Drain Current
IDM b Pulsed Drain Current
PD Maximum Power Dissipation
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=25°C
TC=100°C
30
±12
150
-55 to 150
20
70*
67
140
46.3
18.5
V
°C
A
W
RqJC Thermal Resistance-Junction to Case
Steady State
2.7 °C/W
IDM b Pulsed Drain Current
TA=25°C
91
ID c Continuous Drain Current
TA=25°C
TA=70°C
22.7 A
18.1
PD c Maximum Power Dissipation
TA=25°C
TA=70°C
2.08
W
1.3
RqJA c Thermal Resistance-Junction to Ambient
t £ 10s
Steady State
24
°C/W
60
IAS d Avalanche Current, Single pulse
EAS d Avalanche Energy, Single pulse
Note a,*Max. continue current is limited by bonding wire.
Note bPulse width is limited by max. junction temperature.
L=0.1mH
L=0.1mH
29 A
42 mJ
Note cRqJA steady state t=999s.
Note dUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - August, 2017
2
www.sinopowersemi.com



Sinopower SM4513NHKP
SM4513NHKP
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSSt
Drain-Source Breakdown Voltage
(transient)
Test Conditions
Min.
VGS=0V, IDS=250mA
VGS=0V, ID(aval)=29A,
Tcase=25°C, ttransient=100ns
30
34
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±12V, VDS=0V
RDS(ON) e Drain-Source On-state Resistance
VGS=10V, IDS=20A
TJ=125°C
Gfs Forward Transconductance
Diode Characteristics
VGS=4.5V, IDS=12A
VDS=10V, IDS=5A
VSD e Diode Forward Voltage
ISD=20A, VGS=0V
trr Reverse Recovery Time
ta Charge Time
tb Discharge Time
Qrr Reverse Recovery Charge
ISD=20A, dlSD/dt=100A/ms
Vdd=15V
Dynamic Characteristics
RG Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15W,
IDS=1A, VGEN=10V,
RG=1W
Qg Total Gate Charge
VDS=15V, VGS=10V,
IDS=20A
Qg Total Gate Charge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS=4.5V,
IDS=20A
Qgd Gate-Drain Charge
Note ePulse test ; pulse width£300ms, duty cycle£2%.
-
-
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
1.5
-
2.2
3.2
2.9
33
0.8
35.5
18
17.5
20.4
1
2310
950
92
15
11
34
27
36.5
16.2
3.48
5.38
3.1
Max.
-
-
1
30
1.9
±100
2.7
-
3.5
-
1.1
-
-
-
-
2.2
-
-
-
-
-
-
-
51
-
-
-
-
Unit
V
V
mA
V
nA
mW
S
V
ns
nC
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - August, 2017
3
www.sinopowersemi.com







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)