N-Channel MOSFET. AOTF22N50 Datasheet

AOTF22N50 MOSFET. Datasheet pdf. Equivalent

AOTF22N50 Datasheet
Recommendation AOTF22N50 Datasheet
Part AOTF22N50
Description N-Channel MOSFET
Feature AOTF22N50; AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary The AOT22N50 & A.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOTF22N50 Datasheet




Alpha & Omega Semiconductors AOTF22N50
AOT22N50/AOTF22N50
500V,22A N-Channel MOSFET
General Description
Product Summary
The AOT22N50 & AOTF22N50 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche
capability these parts can be adopted quickly into new and
existing offline power supply designs.
For Halogen Free add "L" suffix to part number:
AOT22N50L&AOTF22N50L
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
600V@150
22A
< 0.26
D
AOT22N50
S
D
G
AOTF22N50
S
D
G
G
S
Orderable Part Number
AOT22N50L
AOTF22N50
AOTF22N50L
Package Type
TO220 Green
TO-220F Pb Free
TO-220F Green
Form
Tube
Tube
Tube
Minimum Order Quantity
1000
1000
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT22N50
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
22
15
TC=25°C
Power Dissipation B Derate above 25oC
PD
417
3.3
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT22N50
65
0.5
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.3
AOTF22N50 AOTF22N50L
500
±30
22* 22*
15* 15*
88
7
735
1470
5
50
39
0.4
-55 to 150
0.3
300
AOTF22N50 AOTF22N50L
65 65
-- --
2.5 3.2
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev.2.0: October 2014
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Page 1 of 6



Alpha & Omega Semiconductors AOTF22N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
BVDSS
/∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=500V, VGS=0V
VDS=400V, TJ=125°C
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±30V
VDS=5V ID=250µA
RDS(ON)
gFS
VSD
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=11A
VDS=40V, ID=11A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=400V, ID=22A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=250V, ID=22A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=22A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=22A,dI/dt=100A/µs,VDS=100V
500
600
V
0.57
V/ oC
1
µA
10
±100 nΑ
3.4 4 4.5 V
0.21 0.26
25 S
0.7 1
V
22 A
88 A
2465
200
14
0.7
3086
290
24
1.4
3710
380
35
2.1
pF
pF
pF
55 69 83
17 22 27
12 24 36
60
122
124
77
415 524 630
7.5 9.6 12
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=7A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: October 2014
www.aosmd.com
Page 2 of 6



Alpha & Omega Semiconductors AOTF22N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10V
100
30 6.5V
10
VDS=40V
20 6V
125°C
1
10
VGS=5.5V
-55°C
25°C
0
0
0.4
5 10 15 20 25
VDS (Volts)
Fig 1: On-Region Characteristics
30
0.3 VGS=10V
0.2
0.1
0.0
0
5 10 15 20 25
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0.1
0
2468
VGS(Volts)
Figure 2: Transfer Characteristics
10
3
2.5 VGS=10V
ID=11A
2
1.5
1
0.5
0
-100
-50
0
50 100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.1
1
0.9
0.8
-100 -50 0 50 100 150 200
TJ (°C)
Figure 5: Break Down vs. Junction Temperature
1.0E+02
1.0E+01
1.0E4+000
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
1.0E-04
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev.2.0: October 2014
www.aosmd.com
Page 3 of 6







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