BFG35

DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors NPN 4 GHz wideband transistor Product specification BFG35 DESCRIPTION NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities. PINNING PIN 1 2 3 4 DESCRIPTION emitter base emitter collector lfpage 4 1 Top view 23 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCEO IC Ptot hFE fT GUM Vo collector-emitter voltage open base DC collector current total power dissipation DC current gain up to Ts = 135 C (note 1) IC = 100 mA; VCE = 10 V; Tj = 25 C transition frequency IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C maximum unilateral power gain IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C output voltage IC = 100 mA; VCE = 10 V; dim = 60 dB; RL = 75 ; f(p+qr) = 793.25 MHz; Tamb = 25 C MIN.    25     TYP.    70 4 15 11 750 MAX. UNIT 18 V 150 mA 1W   GHz  dB  dB  mV LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature CONDITIONS open emitter open base open collector...