N-Channel MOSFET. SM4503NHKP Datasheet

SM4503NHKP MOSFET. Datasheet pdf. Equivalent

SM4503NHKP Datasheet
Recommendation SM4503NHKP Datasheet
Part SM4503NHKP
Description N-Channel MOSFET
Feature SM4503NHKP; SM4503NHKP ® N-Channel Enhancement Mode MOSFET Features · 30V/80A, RDS(ON)= 3mW (Max.) @ VGS=10V R.
Manufacture Sinopower
Datasheet
Download SM4503NHKP Datasheet




Sinopower SM4503NHKP
SM4503NHKP
®
N-Channel Enhancement Mode MOSFET
Features
· 30V/80A,
RDS(ON)= 3mW (Max.) @ VGS=10V
RDS(ON)= 5.1mW (Max.) @ VGS=4.5V
· 100% UIS + Rg Tested
· Reliable and Rugged
· Lower Qg and Qgd for high-speed switching
· Lower RDS(ON) to Minimize Conduction Losses
· Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DDDD
S S SG
DFN5x6A-8_EP
(5,6,7,8)
DD DD
Pin 1
Applications
· Power Management in Desktop Computer or
DC/DC Converters.
· Power Load Switch.
· Notebook Battery Management.
Ordering and Marking Information
(4) G
SSS
( 1, 2, 3 )
N-Channel MOSFET
SM4503NH
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6A-8_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM4503NH KP :
4503NH
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - March, 2018
1
www.sinopowersemi.com



Sinopower SM4503NHKP
SM4503NHKP
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
TSTG
IS
ID a
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Continuous Drain Current
IDM b Pulsed Drain Current
PD Maximum Power Dissipation
RqJC Thermal Resistance-Junction to Case
ID c Continuous Drain Current
PD c Maximum Power Dissipation
RqJA c Thermal Resistance-Junction to Ambient
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=25°C
TC=100°C
Steady State
TA=25°C
TA=70°C
TA=25°C
TA=70°C
t £ 10s
Steady State
30
±20
150
-55 to 150
23
80*
60
160
50
20
2.5
23.5
18.8
2.5
1.6
20
50
V
°C
A
W
°C/W
A
W
°C/W
IAS d
EAS d
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
L=0.1mH
L=0.1mH
30 A
45 mJ
Note a,*Max. continue current is limited by bonding wire.
Note bPulse width is limited by max. junction temperature.
Note cRqJA steady state t=100s.
Note dUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - March, 2018
2
www.sinopowersemi.com



Sinopower SM4503NHKP
SM4503NHKP
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSSt
Drain-Source Breakdown Voltage
(transient)
VGS=0V, IDS=250mA
VGS=0V, ID(aval)=30A
Tcase=25°C, ttransient=100ns
30
34
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
RDS(ON) e Drain-Source On-state Resistance
VGS=10V, IDS=20A
TJ=125°C
VGS=4.5V, IDS=15A
Gfs Forward Transconductance
Diode Characteristics
VDS=5V, IDS=10A
VSD e
trr
Diode Forward Voltage
Reverse Recovery Time
ISD=20A, VGS=0V
ta Charge Time
tb Discharge Time
ISD=20A, dlSD/dt=100A/ms
Qrr Reverse Recovery Charge
Dynamic Characteristics
RG
Ciss
Coss
Crss
td ( ON)
tr
t d (OFF )
tf
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=12V, RL=2.1W,
IDS=5.7A, VGEN=10V,
RG=2.9W
Gate Charge Characteristics
Qg Total Gate Charge
Qg Total Gate Charge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=15V, VGS=10V,
IDS=20A
VDS=15V, VGS=4.5V,
IDS=20A
Note ePulse test ; pulse width£300ms, duty cycle£2%.
-
-
1.4
-
-
-
-
-
-
-
-
-
-
0.7
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
1.7
-
2.5
3.75
3.9
27
0.81
21
13
8
6.3
1
1350
900
65
14.3
26
24
4.4
20
9.2
2.7
6
2
Max.
-
-
1
30
2.5
±100
3
-
5.1
-
1.1
-
-
-
-
2
-
-
-
-
-
-
-
30
-
-
-
-
Unit
V
V
mA
V
nA
mW
S
V
ns
nC
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - March, 2018
3
www.sinopowersemi.com







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