N-Channel MOSFET. SM3321NSQA Datasheet

SM3321NSQA MOSFET. Datasheet pdf. Equivalent

SM3321NSQA Datasheet
Recommendation SM3321NSQA Datasheet
Part SM3321NSQA
Description N-Channel MOSFET
Feature SM3321NSQA; SM3321NSQA Features · 60V/23A, RDS(ON)= 25mW (Max.) @ VGS=10V RDS(ON)= 28.5mW (Max.) @ VGS=4.5V · Re.
Manufacture Sinopower
Datasheet
Download SM3321NSQA Datasheet




Sinopower SM3321NSQA
SM3321NSQA
Features
· 60V/23A,
RDS(ON)= 25mW (Max.) @ VGS=10V
RDS(ON)= 28.5mW (Max.) @ VGS=4.5V
· Reliable and Rugged
· ESD Protection
· 100% UIS + Rg Tested
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
DDDD
S SSG
DFN3x3A-8_EP
(5,6,7,8)
DD DD
Applications
· DC-DC Converter.
· Motor Control
· Power Tools.
· Load Switching.
(4) G
SSS
( 1, 2, 3 )
N-Channel MOSFET
Ordering and Marking Information
SM3321NS
SM3321NS QA :
Assembly Material
Handling Code
Temperature Range
Package Code
SM
3321N
XXXXX
Package Code
QA : DFN3x3A-8_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2016
1
www.sinopowersemi.com



Sinopower SM3321NSQA
SM3321NSQA
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
60
V
±16
TJ
TSTG
Maximum Junction Temperature
Storage Temperature Range
150
-55 to 150
°C
IS Diode Continuous Forward Current
TC=25°C
11 A
ID Continuous Drain Current
IDM a Pulsed Drain Current
TC=25°C
TC=100°C
TC=25°C
23
14.8 A
92
PD Maximum Power Dissipation
TC=25°C
TC=100°C
27.7
W
11.1
RqJC Thermal Resistance-Junction to Case
4.5 °C/W
ID Continuous Drain Current
TA=25°C
TA=70°C
5.4
A
4.4
PD Maximum Power Dissipation
TA=25°C
TA=70°C
1.5
W
1
RqJA c
IAS b
Thermal Resistance-Junction to Ambient
Avalanche Current, Single pulse
Steady State
L=0.5mH
80 °C/W
13 A
EAS b Avalanche Energy, Single pulse
L=0.5mH
42 mJ
Note aPulse width is limited by max. junction temperature.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note cSurface Mounted on 1in2 pad area.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2016
2
www.sinopowersemi.com



Sinopower SM3321NSQA
SM3321NSQA
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics
Test Conditions
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Diode Characteristics
VSD d Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics e
VGS=0V, IDS=250mA
VDS=48V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±16V, VDS=0V
VGS=10V, IDS=15A
VGS=4.5V, IDS=10A
ISD=8A, VGS=0V
ISD=10A, dlSD/dt=100A/ms
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VGS=0V,VDS=0V,f=1MHz
VGS=0V,
VDS=30V,
Frequency=1.0MHz
VDD=30V, RL=30W,
IDS=1A, VGEN=10V,
RG=6W
Qg Total Gate Charge
VDS=30V, VGS=4.5V,
IDS=10A
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=30V, VGS=10V,
IDS=10A
Note dPulse test ; pulse width£300ms, duty cycle£2%.
Note eGuaranteed by design, not subject to production testing.
Min.
60
-
-
0.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
1.3
-
21
22
0.8
24
28
1
1180
98
48
12
6
33
9
11
24
2.5
4
Max.
-
1
30
1.9
±100
25
28.5
1.3
-
-
-
1535
-
-
22
11
60
16
-
33.5
-
-
Unit
V
mA
V
nA
mW
mW
V
ns
nC
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2016
3
www.sinopowersemi.com







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