N-Channel MOSFET. SM3319NAQA Datasheet

SM3319NAQA MOSFET. Datasheet pdf. Equivalent

SM3319NAQA Datasheet
Recommendation SM3319NAQA Datasheet
Part SM3319NAQA
Description N-Channel MOSFET
Feature SM3319NAQA; SM3319NAQA ® N-Channel Enhancement Mode MOSFET Features Pin Description · 30V/14A, RDS(ON) = 24m.
Manufacture Sinopower
Datasheet
Download SM3319NAQA Datasheet




Sinopower SM3319NAQA
SM3319NAQA
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
· 30V/14A,
RDS(ON) = 24mW(max.) @ VGS = 10V
RDS(ON) = 35mW(max.) @ VGS = 4.5V
· Avalanche Rated
· 100% UIS + Rg Tested
· Reliable and Rugged
· ESD Protection
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
DDDD
S SSG
DFN3x3A-8_EP
(5,6,7,8)
DD DD
(4) G
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
SSS
( 1, 2, 3 )
N-Channel MOSFET
SM3319NA
SM3319NA QA :
Assembly Material
Handling Code
Temperature Range
Package Code
SM
3319N
XXXXX
Package Code
QA : DFN3x3A-8_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - March, 2017
1
www.sinopowersemi.com



Sinopower SM3319NAQA
SM3319NAQA
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
TSTG
IS
ID
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Continuous Drain Current
PD Maximum Power Dissipation
RqJC Thermal Resistance-Junction to Case
TC =25° C
TC =25° C
TC =100°C
TC =25° C
TC =100°C
Steady State
30
±20
150
-55 to 150
1.5
14 a
11.5
12.5
5
10
V
°C
A
W
°C/W
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Maximum Power Dissipation
RqJA Thermal Resistance-Junction to Ambient
TA=25°C
TA=70°C
TA=25°C
TA=25°C
TA=70°C
t £ 10s
Steady State c
7
5.6
28
1.56
1
50
80
A
W
°C/W
IAS b Avalanche Current, Single pulse
L=0.1mH
10 A
EAS b Avalanche Energy, Single pulse
L=0.1mH
5 mJ
Note aPackage is limited to 14A.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note cSteady state = 999sec.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - March, 2017
2
www.sinopowersemi.com



Sinopower SM3319NAQA
SM3319NAQA
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Sym bol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Diode Characteristics
VSD d Diode Forward Voltage
trr e Reverse Recovery Time
ta Charge Time
tb Discharge Time
Qrre Reverse Recovery Charge
Dynamic Characteristics e
VGS=0V, IDS=250mA
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
VGS=10V, IDS=7A
VGS=4.5V, IDS=5A
ISD=1A, VGS=0V
ISD=8A, dlSD/dt=100A/ms
RG Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VD S=15V,
Frequency=1.0MHz
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VDD=15V, RL=15W,
IDS=1A, VGEN=10V,
RG=6W
Qg Total Gate Charge
Qg Total Gate Charge
VDS=15V, VGS=10V,
IDS=5A
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS=4.5V,
IDS=5A
Qgd Gate-Drain Charge
Note dPulse test ; pulse width £ 300 ms, duty cycle £ 2%.
Note eGuaranteed by design, not subject to production testing.
Min.
30
-
-
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
1.8
-
20
26
0.75
8
4.5
3.7
3
3
330
57
35
7.5
9.5
15
3.3
6.8
3.2
0.8
1.5
1.1
Max.
-
1
30
2.5
±10
24
35
1.1
-
-
-
-
-
430
-
-
14
18
27
6
10
5
-
-
-
Unit
V
mA
V
mA
mW
V
ns
nC
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - March, 2017
3
www.sinopowersemi.com







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