N-Channel MOSFET. SM3408NSQG Datasheet

SM3408NSQG MOSFET. Datasheet pdf. Equivalent

SM3408NSQG Datasheet
Recommendation SM3408NSQG Datasheet
Part SM3408NSQG
Description N-Channel MOSFET
Feature SM3408NSQG; SM3408NSQG Features • 150V/16A, RDS(ON) = 70mΩ(max.) @ VGS =10V • 100% UIS + R Tested g • Reli.
Manufacture Sinopower
Datasheet
Download SM3408NSQG Datasheet




Sinopower SM3408NSQG
SM3408NSQG
Features
150V/16A,
RDS(ON) = 70m(max.) @ VGS =10V
100% UIS + R Tested
g
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
DDDD
S S SG
Pin 1
DFN3.3x3.3C-8_EP
(5,6,7,8)
DD DD
Applications
(4) G
Synchronous Rectification.
DC-DC Converter.
Load Switch.
Ordering and Marking Information
SSS
( 1, 2, 3 )
N-Channel MOSFET
SM3408NS
SM3408NS QG :
Assembly Material
Handling Code
Temperature Range
Package Code
SM
3408N
XXXXX
Package Code
QG : DFN3.3x3.3C-8_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2015
1
www.sinopowersemi.com



Sinopower SM3408NSQG
SM3408NSQG
®
Absolute
Maximum
Ratings
(T
A
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
ID Continuous Drain Current
IDM a Pulsed Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJA c
IAS b
EAS b
Thermal Resistance-Junction to Ambient
Avalanche Current, Single pulse (L=0.5mH)
Avalanche Energy, Single pulse (L=0.5mH)
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
t10s
Steady State
Rating
150
±25
150
-55 to 150
8
16
10
48
46
18
2.7
4.2
3.4
3.1
2
40
80
6
9
Unit
V
°C
A
A
W
°C/W
A
W
°C/W
°C/W
A
mJ
Note a: Pulse width limited by max. junction temperature.
Note b: UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note c: Surface Mounted on 1in2 pad area.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2015
2
www.sinopowersemi.com



Sinopower SM3408NSQG
SM3408NSQG
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Diode Characteristics
VSD d Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics e
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VGS=0V, IDS=250µA
VDS=120V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS=10V, IDS=9A
ISD=5A, VGS=0V
ISD=9A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,f=1MHz
VGS=0V,
VDS=30V,
Frequency=1.0MHz
VDD=30V, RL=30,
IDS=1A, VGEN=10V,
RG=6
VDS=75V, VGS=10V,
IDS=9A
Min. Typ. Max. Unit
150 -
-V
- -1
µA
- - 30
23 4V
- - ±100 nA
- 58 70 m
- 0.8 1.3 V
- 59 - ns
- 152 - nC
- 1.0 -
- 1320 1720
- 100 - pF
- 26 -
- 16 29
- 6 11
ns
- 23 42
- 10 18
- 22 31
- 6.8 - nC
- 4.3 -
Note e: Pulse test ; pulse width300µs, duty cycle2%.
Note f: Guaranteed by design, not subject to production testing.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2015
3
www.sinopowersemi.com







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